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APTGT450DU60G
Dual common source Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 600V IC = 450A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Max ratings 600 550 450 600 20 1750 900A @ 550V
Unit V A V W
June, 2006 1-5 APTGT450DU60G - Rev 1
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT450DU60G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 450A Tj = 150C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.4 1.5 5.8 Max 500 1.8 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 450A R G = 1 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 450A R G = 1 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 450A Tj = 25C R G = 1 Tj = 150C
Min
Typ 37 2.3 1.1 130 55 250 60 145 60 320 80 2.25 4.2 12.8 15.7
Max
Unit nF
ns
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V IF = 450A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 200 500
Unit V A A
di/dt =4000A/s
mJ
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2-5
APTGT450DU60G - Rev 1
June, 2006
IF = 450A VR = 300V
450 1.5 1.4 120 210 20.3 42.8 5.2 10.6
1.9
V ns C
APTGT450DU60G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.085 0.14 175 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT450DU60G - Rev 1
June, 2006
APTGT450DU60G
Typical Performance Curve
1000 800
T J=125C
Output Characteristics (V GE=15V)
T J=25C
Output Characteristics 1000
TJ = 150C
800
VGE=19V
VGE=13V VGE =15V VGE =9V
IC (A)
400 200 0 0 0.5
T J=25C
IC (A)
600
TJ=150C
600 400 200 0
1 1.5 V CE (V)
2
2.5
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
1000 800
Transfert Characteristics 35
T J=25C
Energy losses vs Collector Current 30 25 E (mJ)
VCE = 300V VGE = 15V RG = 1 TJ = 150C Eoff
IC (A)
600 400 200 0 5 6 7 8 V GE (V) Switching Energy Losses vs Gate Resistance 30
V CE = 300V V GE =15V I C = 450A T J = 150C
Eoff
20 15 10
Er
T J=125C T J=150C TJ=25C
5 0 0 200 400 600 IC (A) 800
Eon
9
10
11
1000
Reverse Bias Safe Operating Area 1000 800 IF (A) 600 400
E (mJ)
20
Eon
10
Er Eon
200 0
VGE =15V T J=150C RG=1
0 0 2 4 6 Gate Resistance (ohms) 8
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 Thermal Impedance (C/W) IGBT 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration in Seconds
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4-5
APTGT450DU60G - Rev 1
June, 2006
APTGT450DU60G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 200 400 IC (A) 600 800
Hard switching ZCS ZVS VCE=300V D=50% RG=1 TJ=150C
Forward Characteristic of diode 1000 800 600 400 200 0 0 0.4 0.8 1.2 V F (V) 1.6 2
TJ=125C T J=150C
IC (A)
Tc =85C
T J=25C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1
Diode
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT450DU60G - Rev 1
June, 2006

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